? 2011 ixys corporation, all rights reserved ds98705b(04/11) v dss = 1000v i d25 = 4a r ds(on) 3.0 n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c4a i dm t c = 25 c, pulse width limited by t jm 16 a i a t c = 25 c4a e as t c = 25 c 700 mj dv/dt i s i dm , v dd v dss ,t j 150 c 5 v/ns p d t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m c mounting force (to-263) 10..65/2.2..14.6 nm/lb.in. m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g ixfa4n100q ixfp4n100q g = gate d = drain s = source tab = drain to-263 aa (ixfa) g d s to-220ab (ixfp) d (tab) g s d (tab) hiperfet tm power mosfets q-class features z international standard packages z avalanche rated z fast intrinsic diode z low q g z low r ds(on) z low drain-to-tab capacitance z low package inductance advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 1.5ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 3.0
ixys reserves the right to change limits, test conditions, and dimensions. ixfa4n100q ixfp4n100q symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 1.5 2.5 s c iss 1050 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 120 pf c rss 30 pf t d(on) 17 ns t r 15 ns t d(off) 32 ns t f 18 ns q g(on) 39 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 9 nc q gd 23 nc r thjc 0.80 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 4 a i sm repetitive, pulse width limited by t jm 16 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 0.52 c i rm 1.80 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. i f = i s , -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 4.7 (external) pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline
? 2011 ixys corporation, all rights reserved ixfa4n100q ixfp4n100q v ds - volts 0246810 i d - amperes 0 1 2 3 4 v ds - volts 0 5 10 15 20 i d - amperes 0 1 2 3 4 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v gs - volts 345678 i d - amperes 0 1 2 3 4 i d - amperes 0123456 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts 0 4 8 12 16 20 i d - amperes 0 1 2 3 4 5 6 7v 6v v gs = 10v v gs = 10v 9v 8v t j = 25c v gs = 10v 9v 8v t j = 25c t j = 125c 5v 5v t j = 25c t j = 125c 6v 7v 5v 6v 7v v gs = 10v 9v 8v t j = 125 o c v gs = 10v i d = 2a t j = 25 o c figure 1. output characteristics at 25 o c figure 2. extended output characteristics at 125 o c figure 3. output characteristics at 125 c figure 6. r ds(on) normalized to 0.5 i d25 value vs. t j figure 5. r ds(on) normalized to 0.5 i d25 value vs. i d figure 4. admittance curves
ixys reserves the right to change limits, test conditions, and dimensions. ixfa4n100q ixfp4n100q ixys ref: ixt_4n100q (4u)04-01-11-a t c - degrees centigrade -50 -25 0 25 50 75 100 125 150 i d - amperes 0 1 2 3 4 5 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.01 0.10 1.00 v ds - volts 0 5 10 15 20 25 30 35 capacitance - pf 10 100 1000 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 2 4 6 8 10 gate charge - nc 0 102030405060 v gs - volts 0 3 6 9 12 15 crss coss ciss v ds = 600 v i d = 3 a i g = 10 ma f = 1mhz t j = 125 o c t j = 25 o c 60 2000 figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 11. transient thermal resistance
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